A semiconductor device comprises a semiconductor substrate, and a capacitor provided
above the semiconductor substrate, the capacitor comprises a lower electrode containing
metal, a first dielectric film provided above the lower electrode and containing
tantalum oxide or niobium oxide, a top surface of the first dielectric film including
a projecting portion, an upper electrode provided above the projecting portion
of the first dielectric film and containing metal, a second dielectric film provided
between the lower electrode and the first dielectric film and having a lower permittivity
than the first dielectric film, and a third dielectric film provided between the
projecting portion of the first dielectric film and the upper electrode and having
a lower permittivity than the first dielectric film.
