A semiconductor memory device and a method for pre-charging the same, the semiconductor
memory device comprising a plurality of memory cell array blocks, each having a
plurality of memory cells connected between respective bit line pairs and respective
word line pairs, a plurality of pairs of data input/output lines connected to the
respective bit line pairs for transferring data, a first pre-charge circuit for
pre-charging the bit line pairs to a first pre-charge voltage during a first operation,
a second pre-charge circuit for pre-charging the data input/output line pairs and
the first pre-charge voltage to the first pre-charge voltage during the first operation,
a plurality of third pre-charge circuits, each being disabled in the first operation
and pre-charges the data input/output line pairs in the corresponding memory cell
array blocks to a second pre-charge voltage during a second operation, and a discharging
circuit for lowering the first pre-charge voltage when the first pre-charge voltage
is greater than a desired voltage level during the first operation.
