A semiconductor device is provided including a circuit employing two or more
field-effect
transistor that are desired to have equal characteristics, capable of realizing
high reliability and superior transistor characteristics. The transistors which
are desired to have equal characteristics are placed in the semiconductor device
so as to have the same STI trench width (the width of shallow trench isolation
adjacent to an active area in which the transistor is formed). By such composition,
stress growing in the active area due to the shallow trench isolation is equalized
among the transistors, and, thereby, the characteristics of the transistors can
be equalized.
