A method for fabricating a p-n heterojunction device is provided, the device
being
preferably comprised of an n-type GaN layer co-doped with silicon and zinc and
a p-type AlGaN layer. The device may also include a p-type GaN capping layer. The
device can be grown on any of a variety of different base substrates, the base
substrate comprised of either a single substrate or a single substrate and an intermediary
layer. The device can be grown directly onto the surface of the substrate without
the inclusion of a low temperature buffer layer.
