When a crystalline semiconductor thin film formed by using a catalytic element
for facilitating crystallization is subjected to a heat treatment in an atmosphere
containing a halogen element at a temperature exceeding 700 C., a crystal
structure in which crystal grain boundaries do not substantially exist can be obtained.
In the present invention, the foregoing crystalline semiconductor thin film is
formed on a crystallized glass substrate which is inexpensive and has high heat
resistance, so that an inexpensive semiconductor device can be provided.
