A semiconductor device, methods for manufacturing the semiconductor device, and
an integrated circuit including the semiconductor device are disclosed. The semiconductor
device includes an LDMOS transistor and a MOS transistor, both formed simultaneously
on a same substrate. The gate electrodes and the gate oxide layers of the LDMOS
and the MOS are formed independently from one another. The source and drain regions
of the LDMOS and the MOS are respectively formed in a self-aligned manner. In this
way, the LDMOS and the MOS can be formed, in an effective manner, while sustaining
the respective desired characteristics.
