Dangling bonds of silicon atoms tend to take place in silicon oxide grown
on a silicon wafer due to oxygen deficiency; hypofluorous acid is introduced into
the silicon oxide so that the hypofluorous acid reaches the dangling bonds through
diffusion; the hypofluorous acid is decomposed into fluorine atoms and hydroxyl
groups, and the fluorine atoms and hydroxyl groups deactivate the dangling bonds
of silicon atoms; even if electric charges are injected into the silicon oxide,
the deactivation is never broken so that the silicon oxide layer is stable and
highly reliable.
