A microelectronic device fabricating method includes providing a substrate having
a beveled portion and forming a layer of structural material on the beveled portion.
Some of the structural material can be removed from the beveled portion by anisotropic
etching to form a device feature from the structural material. The device feature
can be formed on the beveled portion as with a pair of spaced, adjacent barrier
material lines that are substantially void of residual shorting stringers extending
therebetween. Structural material can be removed from the beveled portion to form
an edge defined feature on a substantially perpendicular edge of the substrate.
The beveled portion and perpendicular edge can be part of a mandril. The mandril
can be removed from the substrate after forming the edge defined feature.
