The present invention provides a semiconductor device, comprising a gate electrode
of a stacked structure consisting of a polysilicon layer and a metal layer, a cap
insulating film formed on the gate electrode, and a gate side wall film formed
on the side wall of the gate electrode. The cap insulating film consists of an
insulating film containing a silicon oxide-based layer and a silicon nitride layer
and serves to protect the upper surface of the gate electrode. Further, the gate
side wall film consists of an insulating film containing a silicon nitride film
and a silicon oxide film and serves to protect the side surface of the gate electrode.
