The semiconductor device comprises a semiconductor substrate 10; a capacitor
element 40 formed above the semiconductor substrate and including a lower
electrode 34, a capacitor insulation film 36 formed on the lower
electrode and an upper electrode 38 formed on the capacitor insulation film;
a shield layer 14; 58 formed at least either of above and below the capacitor
element; and a lead-out interconnection layer 22; 50 formed between the
capacitor element and the shield layer and electrically connected to the lower
electrode or the upper electrode, a plurality of holes 16, 60 being formed
in each of the shield layer and the lead-out interconnection layer. The shield
layers are formed above and below the MIM capacitor, whereby combination of noises
with the MIM capacitor can be prevented.
