A semiconductor device comprises a memory cell array, bit line, /bit line complementary
to the bit line, reference voltage generating circuit and sense amplifier. The
bit line is connected to the memory cells and applied with a voltage read from
each memory cell of the memory cell array. The /bit line is supplied with a reference
voltage. The reference voltage generating circuit generates the reference voltage
that has temperature dependence for compensating a change in the voltage, read
to the bit line, due to temperature. The reference voltage generating circuit controls
the reference voltage such that the reference voltage assumes a midpoint of trails
of a signal value distribution indicative of "0" data and a signal value distribution
indicative of "1" data. The sense amplifier compares the voltage, read to the bit
line, with the reference voltage supplied to the /bit line, and amplifies the difference therebetween.
