In a semiconductor wafer (W) having a periphery thereof chamfered, and having
at least a main surface side thereof subjected to mirror finishing, an inclined
surface (21) is formed on the periphery of the wafer, such that has an angle
() of inclination of the inclined surface (21) with respect to a
main surface (10) is not smaller than 5 and not larger than 25,
and at the same time a length (L) of the same in the radial direction of the wafer
is 100 m or longer. Further, the inclined surface is configured to have
a non-mirror-finished portion (21b) toward the periphery of the wafer.
