The pattern dimensions of an X-ray absorber are made approximately 1.5 times
(approximately 75 nm) a pattern half pitch (L/2=50 nm). Thereby, a high quality
optical image can be obtained since the contrast in regard to X-rays of wavelengths
shorter than approximately 8 to 9 is improved vis--vis
the contrast of a 50 nm line and space periodic mask pattern. As a result, an X-ray
exposure method produces a high resolution, and a semiconductor device manufactured
by this X-ray exposure method as well as an X-ray mask, X-ray exposure unit and
resist material.
