A magnetoresistive memory apparatus with a semiconductor substrate having a plurality
of intersecting, non-contacting word lines and bit lines constituting a matrix,
and a plurality of ferromagnetic tunnel junction devices located adjacent each
intersection of the plurality of lines, each junction device having, disposed one
upon another via insulating layers, free layers having variable magnetization directions
and fixed magnetization layers having fixed magnetization directions, with magnetized
information being written to the memory device at an intersection selected by magnetization
electric currents supplied to the lines, the magnetized information read out by
detecting the resistance variance of electric currents flowing through the memory
device due to the tunnel effect. The plurality of junction devices deviate from
the intersections of the plurality of lines, and between the lines are non-contacting
free layer extended portions being extensions from only the free layer, to shorten
the interval there between.
