The purpose of the invention is to improve reliability of a light emitting apparatus
including a TFT and organic light emitting elements. The light emitting apparatus
according to the invention having a thin film transistor and a light emitting element
includes a first inorganic insulation layer on the lower surface of a semiconductor
layer, a second inorganic insulation layer on the upper surface of a gate electrode,
a first organic insulation layer on the second inorganic insulation layer, a third
inorganic insulation layer on the first organic insulation layer, a wiring layer
extending on the third inorganic insulation layer, a second organic insulation
layer overlapped with the end of the wiring layer and having an inclination angle
of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface
and side surface of the second organic insulation layer and having an opening over
the wiring layer, a cathode layer formed in contact with the wiring layer and having
side end overlapped with the fourth inorganic insulation layer, and an organic
compound layer formed in contact with the cathode layer and the fourth inorganic
insulation layer and including light emitting material, and an anode layer formed
in contact with the organic compound layer including the light emitting material,
wherein the third inorganic insulation layer and the fourth inorganic insulation
layer are formed with silicon nitride or aluminum nitride.
