An emitter has an electron supply layer and a silicon-based dielectric layer
formed
on the electron supply layer. The silicon-based dielectric layer is preferably
less than about 500 Angstroms. Optionally, an insulator layer is formed on the
electron supply layer and has openings defined within which the silicon-based dielectric
layer is formed. A cathode layer is formed on the silicon-based dielectric layer
to provide a surface for energy emissions of electrons and/or photons. Preferably,
the emitter is subjected to an annealing process thereby increasing the supply
of electrons tunneled from the electron supply layer to the cathode layer.
