The present invention discloses an nF-opening-based mask-programmable read-only
memory. Because its openings can be nx (n1) wider than its address-selection
lines, this memory can use less expensive opening mask. Other mask-programmable
3-D memory (3D-M) structures are also disclosed. The present invention makes further
improvements to the 3D-M's peripheral circuits. Full-read mode and self-timing
can be used to improve the speed and reduce the power consumption.
