There is disclosed a semiconductor device comprising a semiconductor substrate,
and a capacitor provided above the semiconductor substrate and comprising a bottom
electrode, a top electrode, and a dielectric film provided between the bottom electrode
and the top electrode, at least one of the bottom electrode and the top electrode
comprising a conductive film selected from a noble metal film and a noble metal
oxide film, a metal oxide film having a perovskite structure, provided between
the dielectric film and the conductive film, represented by ABO3, and
containing a first metal element as a B site element, and a metal film provided
between the conductive film and the metal oxide film, and containing a second metal
element which is a B site element of a metal oxide having a perovskite structure,
a decrease of Gibbs free energy at a time when the second metal element forms an
oxide being larger than that at a time when the first metal element forms an oxide.
