The present invention discloses a light-emitting diode and a method for manufacturing
such a light-emitting diode with a direct band-gap III-V compound semiconductor
material on a GaAs substrate. It is implemented by forming a first conductive electrode
on the top edge of the epitaxial LED layer and a second conductive electrode opposite
the first conductive electrode on the edge of a transparent substrate. Further,
after the first conductive electrode and second conductive electrode are connected
by chip bonding skill, it is selectively to remove the GaAs substrate and plate
a transparent electrode on the top portion of the epitaxial LED layer. Therefore,
when casting from P-N junction of the light-emitting diode, the light will go through
with directions of the top portion of epitaxial layer and transparent substrate.
