This invention provides a structure and method for improved transmission line
operation on integrated circuits. One method of the invention includes forming
transmission lines in a memory device. The method includes forming a first layer
of electrically conductive material on a substrate. A first layer of insulating
material is formed on the first layer of the electrically conductive material.
A pair of high permeability metal lines are formed on the first layer of insulating
material. The pair of high permeability metal lines include composite hexaferrite
films. A transmission line is formed on the first layer of insulating material
and between and parallel with the pair of high permeability metal lines. A second
layer of insulating material is formed on the transmission line and the pair of
high permeability metal lines. And, the method includes forming a second layer
of electrically conductive material on the second layer of insulating material.
