Embodiments of the present invention provide a striped or closed cell
trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped
or closed cell TMOSFET comprises a source region, a body region disposed above
the source region, a drift region disposed above the body region, a drain region
disposed above the drift region. A gate region is disposed above the source region
and adjacent the body region. A gate insulator region electrically isolates the
gate region from the source region, body region, drift region and drain region.
The body region is electrically coupled to the source region.
