An amorphous-silicon thin film transistor and a shift resister shift resister
having the amorphous-silicon TFT include a first conductive region, a second conductive
region and a third conductive region. The first conductive region is formed on
a first plane spaced apart from a substrate by a first distance. The second conductive
region is formed on a second plane spaced apart from the substrate by a second
distance. The second conductive region includes a body conductive region and two
hand conductive regions elongated from both ends of the body conductive region
to form an U-shape. The third conductive region is formed on the second plane.
The third conductive region includes an elongated portion. The elongated portion
is disposed between the two hand conductive regions of the second conductive region.
The amorphous-silicon TFT and the shift resister having the amorphous TFT reduce
a parasitic capacitance between the gate electrode and drain electrode.
