A layered article and method for forming the same includes a single crystal silicon
substrate, a silicon oxynitride layer (SixNyOz) disposed on the silicon substrate,
and a single crystal GaN layer disposed on the oxynitride layer. The silicon oxynitride
layer can be formed by nitridation of a native oxide layer. One or more integrated
electronic circuits and/or integrated optical or optoelectronic devices can be
built on the article.
