The present invention is directed to a method for fabricating a thin film capacitor
of a metal/insulator/metal (MIM) structure, which is capable of enabling small-sizing
of a semiconductor device while maintaining electrostatic capacity of a capacitor.
The method comprises the steps of: forming a heterogeneous film on a lower insulation
film on a structure of a semiconductor substrate; forming a plurality of projections
by selectively etching the heterogeneous film; and forming a first electrode layer,
a dielectric layer, and a second electrode layer on the lower insulation including
the plurality of projections in order along a surface shape of the projections
such that a plurality of projecting parts are formed in the first electrode layer,
the dielectric layer and the second electrode layer, respectively.
