A high frequency oscillator for an integrated semiconductor circuit is a component
of the semiconductor circuit, which is comprised of a first silicon layer, an adjoining
silicon dioxide layer (insulation layer), and an additional subsequent silicon
layer (structured layer), (SOI wafer), wherein the high frequency oscillator is
comprised of a resonator with a metallized cylinder made of silicon disposed in
the structured layer and a coupling disk that overlaps the cylinder in the vicinity
of the layer, and an IMPATT diode that is connected to the cylinder of the resonator
via a recess in the coupling disk.
