The present invention provides a FinFET device that has a first fin and a second
fin. Each fin has a channel region and source and drain regions that extend from
the channel region. The fins have different heights. The invention has a gate conductor
positioned adjacent the fins. The gate conductor runs perpendicular to the fins
and crosses the channel region of each of the first fin and second fin. The fins
are parallel to one another. The ratio of the height of the first fin to the height
of the second fin comprises a ratio of one to 2/3. The ratio is used to tune the
performance of the transistor and determines the total channel width of the transistor.
