A method and system for providing and using a magnetic memory are disclosed.
The
method and system include providing a plurality of magnetic memory cells and providing
at least one magnetic write line coupled with the plurality of magnetic memory
cells. Each of the magnetic memory cells includes a magnetic element having a data
storage layer. The data storage layer stores data magnetically. The magnetic write
line(s) are magnetostatically coupled with at least the data storage layer of the
magnetic element of the corresponding magnetic memory cells. Consequently, flux
closure is substantially achieved for the data storage layer of each of the plurality
of magnetic memory cells.
