A word line strap layout structure is described, comprising an isolation post,
a word line, a contact and a metal line. The isolation post is located on a substrate
between two memory areas. The word line crosses over the substrate and the isolation
post, and the contact is located on the word line over the isolation post, wherein
the isolation post and the contact are of the same scale in size. The metal line
is located over the substrate electrically connecting with the word line via the contact.
