We disclose the structure of an electronic device, the method of making the device
and the operation of the device. The device is built near the top of a substrate.
It has, near the top surface, a buried layer that is electrically communicable
to a drain terminal. The device has a body region over the buried layer. A portion
of the body region contacts a gate region connected to a gate terminal. The device
has a channel region, of which the length spans the distance between the buried
layer and a source region, which projects upward from the channel region and is
connected to a source terminal. The device current flows in the channel substantially
perpendicularly to the top surface of the substrate.
