An InAs/GaAs quantum dot light emitting diode and a method of fabricating the
same are disclosed. The InAs/GaAs quantum dot light emitting diode which is formed
by turning off an As shutter and using As background concentration for epitaxy,
comprises a Si-doped GaAs substrate, a N-type structure, an undoped quantum well,
aseries of quantum dot layers, spacer layers, a barrier layer and a P-type structure.
