According to embodiments of the present invention, methods of manufacturing
a semiconductor device, and semiconductor devices manufactured thereby, are provided.
A field region is formed that defines active regions in a semiconductor substrate.
Spaced apart gates are formed on the active regions in the semiconductor substrate.
The gates have sidewalls that extend away from the semiconductor substrate. First
spacers are formed on the sidewalls of the gates. Second spacers are formed on
the first spacers and opposite to the gates. Ion impurities are implanted into
the active regions in the semiconductor substrate, adjacent to the gates, using
the first and second spacers as an ion implantation mask. A portion of the second
spacers is removed to widen the gaps between the gates. A dielectric layer is formed
on the semiconductor substrate in the gaps between the gates.
