A method of forming a thin film transistor array panel is described. The thin
film
transistor array comprises a substrate, a plurality of scan lines, a plurality
of gates a plurality of first bonding pads and a plurality of second bonding pads,
wherein the first bonding pads are connected with the scan lines. The first bonding
pads and the second bonding pads are formed as a part of the first metal layer.
The data lines are extended to electrically connected with the second bonding pads
via contact windows.
