A horizontal surrounding gate MOSFET comprises a monolithic structure formed
in
an upper silicon layer of a semiconductor substrate which is essentially a silicon-on-insulator
(SOI) wafer, the monolithic structure comprising a source and drain portion oppositely
disposed on either end of a cylindrical channel region longitudinally disposed
between the source and drain. The channel is covered with a gate dielectric and
an annular gate electrode is formed circumferentially covering the channel.
