A method for forming a silicon oxide layer over a substrate disposed in a high
density plasma substrate processing chamber. The method includes flowing a process
gas that includes a silicon-containing source, an oxygen-containing source and
a fluorine-containing source into the substrate processing chamber and forming
a plasma from said process gas. The substrate is heated to a temperature above
450 C. during deposition of said silicon oxide layer and the deposited layer
has a fluorine content of less than 1.0 atomic percent.
