A method for depositing a low dielectric constant film on a substrate. The method
includes depositing a low dielectric constant film comprising silicon, carbon,
oxygen and hydrogen on the substrate disposed in a chemical vapor deposition chamber,
introducing a gas mixture comprising a hydrogen-containing gas to the chemical
vapor deposition chamber, forming a plasma of the gas mixture proximate the low
dielectric constant film using a radio frequency power, and applying a direct current
bias to at least one of the substrate or a gas distribution plate to cure the low
dielectric constant film.
