Surface acoustic wave device on LiTaO3 substrate using primarily silver electrodes covered with SiO2 film
   
   

A surface acoustic wave device has a significantly improved frequency temperature characteristic due to the arrangement of a SiO2 film on an IDT such that cracking in the SiO2 film surface is prevented from occurring, desired characteristics are reliably achieved, the electromechanical coupling coefficients is increased, and the attenuation constant is reduced. In the surface acoustic wave device, at least one IDT primarily including Ag is arranged on a 20 to 60-rotated Y plate LiTaO3 substrate, and the SiO2 film is arranged on the LiTaO3 substrate while covering the IDT.

 
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