A semiconductor device formed by forming contact holes in the insulating film,
that covers the source/drain of the MOSFET and the capacitor in the memory cell
region, on the lower electrode of the capacitor by the same steps, then filling
the plugs into contact holes, and then forming the contact hole on the upper electrode
of the capacitor. Accordingly, there can be provided the semiconductor device having
the ferroelectric capacitor, capable of simplifying respective wiring connection
structures to the upper electrode and the lower electrode of the capacitor by suppressing
the damage to the capacitor formed over the transistor.
