The present invention discloses a method for fabricating multiple-thickness insulator
layers via strain field generated by stress. The strain field is used for alternating
a develop mechanism of insulator layers on the quantum dots. By forming the multiple-thickness
insulator layers at various developing rates, not only leakage current is prevented,
but also components are kept isolated in the nano-electronics components. In nano-electronics
manufacturing, the method for fabricating multiple-thickness insulator layers results
in both better product reliability and the yield rate. It is potential for integral
circuit manufacturing.
