A semiconductor device and a method of fabricating the same according to this
invention
are such that: a gate insulator is formed over a predetermined region of a semiconductor
substrate; a gate electrode is formed on the gate insulator; source and drain regions
respectively formed in portions of the predetermined region that are situated on
both sides of the gate electrode in plan view; a body region formed by a region
of the predetermined region exclusive of the source and drain regions; and a contact
electrically interconnecting the gate electrode and the body region, wherein a
portion of the contact which is connected to the gate electrode is formed to intersect
the gate electrode in plan view.
