Overcoating compositions for photoresist and methods for reducing linewidth
of the photoresist patterns are disclosed. More specifically, an overcoating composition
containing acids is coated on a whole surface of a photoresist pattern formed by
a common lithography process to diffuse the acids into the photoresist pattern.
The photoresist in the portion where the acids are diffused is developed with an
alkali solution to be removed. As a result, the linewidth of positive photoresist
patterns can be reduced, and the linewidth of negative photoresist patterns can
be prevented from slimming in a subsequent linewidth measurement process using SEM.
