A thin tantalum film deposited on an insulating substrate is patterned to form
an electrode wiring of a first layer which is the lowermost layer for constituting
the input lead wiring and, then, an SiNx film is formed as the gate-insulating
film. An electrode wiring of a second layer formed of an ITO (indium tin oxide)
film and an electrode wiring of a third layer formed of a thin tantalum film are
laminated on the gate-insulating film in a manner that the plurality of electrode
wiring portions possess widths W1, W2 and W3 which are 300
m or less at the greatest. Here, the electrode wiring of the second layer
and the electrode wiring of the third layer are so arranged as will not be overlapped
on the edge portions on both sides of the electrode wiring of the first layer.
