A method for modifying a surface of a substrate to be processed, by utilizing
plasma
includes the steps of adjusting a temperature of the substrate from 200 C.
to 400 C., introducing gas including nitrogen atoms or mixture gas including
inert gas and the gas including nitrogen atoms into a plasma process chamber, adjusting
pressure in the plasma process chamber above 13.3 Pa, generating plasma in the
plasma process chamber, and injecting ions equal to or smaller than 10 eV in the
plasma into the substrate to be processed.
