A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed
of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon
oxide thin film, a capacitor and a transistor for a semiconductor device including
the bismuth-titanium-silicon oxide thin film, and an electronic device employing
the capacitor and/or the transistor are provided. The bismuth titanium silicon
oxide has good dielectric properties and is thermally and chemically stable. The
bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric
film of a capacitor or as a gate dielectric film of a transistor in a semiconductor
device. Various electronic devices having good electrical properties can be manufactured
using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.
