Magneto resistive storage device having a magnetic field sink layer

   
   

An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.

 
Web www.patentalert.com

< Heterojunction bipolar transistor with monolithically integrated junction field effect transistor and method of manufacturing same

< Semiconductor memory device and method of fabricating the same

> Semiconductor memory device

> Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film

~ 00194