An electro-magnetic device, such as magnetic memory device, is disclosed that
includes means for structuring, attenuating or eliminating stray fields at the
boundaries that produce an offset in the magneto-resistive response. The device
comprises a conductive first layer and the attenuating means comprises a sink layer,
electro-magnetically coupled to the first layer, to attenuate the stray boundary
magneto-resistive offset at a boundary of the first layer during electrical operation.
