A ferroelectric capacitor having a ferroelectric film is formed on a conductive
silicon substrate. The dielectric capacitor is covered with a first diffusion barrier
film, and a second interlayer insulating film is formed on the first diffusion
barrier film. A first metal wiring is formed on the second interlayer insulating
film, and the first metal wiring is covered with a first buffer film. A second
diffusion barrier film is formed on the first buffer film, and a third interlayer
insulating film is formed on the second diffusion barrier film. A second metal
wiring is formed on the third interlayer insulating film, and the second metal
wiring is covered with a second buffer film. A third diffusion barrier film is
formed on the second buffer film.
