A process for fabricating a semiconductor device including the steps of introducing
into an amorphous silicon film, a metallic element which accelerates the crystallization
of the amorphous silicon film, applying heat treatment to the amorphous silicon
film to obtain a crystalline silicon film, irradiating a laser beam or an intense
light to the crystalline silicon film, and heat treating the crystalline silicon
film irradiated with a laser beam or an intense light.
