A process for applying a metallization interconnect structure to a semiconductor
workpiece having a barrier layer deposited on a surface thereof is set forth. The
process includes the forming of an ultra-thin metal seed layer on the barrier layer.
The ultra-thin seed layer having a thickness of less than or equal to about 500
Angstroms. The ultra-thin seed layer is then enhanced by depositing additional
metal thereon to provide an enhanced seed layer. The enhanced seed layer has a
thickness at all points on sidewalls of substantially all recessed features distributed
within the workpiece that is equal to or greater than about 10% of the nominal
seed layer thickness over an exteriorly disposed surface of the workpiece.
