Quantum wells and associated barriers layers can be grown to include nitrogen
(N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within
or about a typical GaAs substrate to achieve long wavelength VCSEL performance,
e.g., within the 1260 to 1650 nm range. In accordance with features of the present
invention, a vertical cavity surface emitting laser is described that includes
at least one quantum well comprised of InGaAs; GaAsN barrier layers sandwiching
said at least one quantum well; and GaAsN confinement layers sandwiching said barrier
layers. GaAsN barrier layers sandwiching the quantum well and AlGaAs confinement
layers sandwiching the barrier layers can also be provided with a InGaAs quantum
well. AlGaAs barrier layers sandwiching the at least one quantum well and GaAsN
confinement layers sandwiching the barrier layers can also be provided with a InGaAs
quantum well. Quantum wells can be developed up to and including 50 in
thickness. Quantum wells can also be developed with a depth of at least 40 meV.
