A semiconductor memory cell structure and method for forming the same. The memory
cell is formed on a surface of a substrate and includes an active region formed
in the substrate, an epitaxial post formed on the surface of the substrate over
the active region. The epitaxial post has at least one surface extending outwardly
from the surface of the substrate and another surface opposite of the surface of
the substrate. A gate structure is formed adjacent to at least a portion of all
the outwardly extending surfaces of the epitaxial post, and a capacitor formed
on an exposed surface of the epitaxial post.
