A system for electroplating a semiconductor wafer is set forth. The system comprises
a first electrode in electrical contact with the semiconductor wafer and a second
electrode. The first electrode and the semiconductor wafer form a cathode during
electroplating of the semiconductor wafer. The second electrode forms an anode
during electroplating of the semiconductor wafer. A reaction container defining
a reaction chamber is also employed. The reaction chamber comprises an electrically
conductive plating solution. At least a portion of each of the first electrode,
the second electrode, and the semiconductor wafer contact the plating solution
during electroplating of the semiconductor wafer. An auxiliary electrode is disposed
exterior to the reaction chamber and positioned for contact with plating solution
exiting the reaction chamber during cleaning of the first electrode to thereby
provide an electrically conductive path between the auxiliary electrode and the
first electrode. A power supply system is connected to supply plating power to
the first and second electrodes during electroplating of the semiconductor wafer
and is further connected to render the first electrode an anode and the auxiliary
electrode a cathode during cleaning of the first electrode.
